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| CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) FEATURES: * Internal Input/Output Matching * PG = 9.0 dB Typ. at 150 W/ 900 MHz * OmnigoldTM Metalization System E D C .1925 F H I N L J DIM A B C .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .395 / 10.03 .850 / 21.59 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10 D E F G H I J K L M N MIN IMUM inches / m m .080x45 A B FULL R (4X).060 R M G MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG JC O O K 25 A 28 V 60 V 3.5 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.6 C/W O O O O MAXIMUM inches / m m .220 / 5.59 .210 / 5.33 .230 / 5.84 .130 / 3.30 .390 / 9.91 .820 / 20.83 ORDER CODE: ASI10586 O CHARACTERISTICS SYMBOL BVCEO BVCER BVCES BVEBO ICES hFE PG IMD C TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCC = 26 V IC = 1.0 A POUT = 150 W ICQ = 2 X 150 mA f = 960 MHz RBE = 200 MINIMUM TYPICAL MAXIMUM 26 35 60 3.5 10 30 8.0 -28 35 45 120 UNITS V V V V mA --dB dBc % VSWR = 5:1 at all phase angles No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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